发明名称 |
Dynamic random access memory boosted voltage supply |
摘要 |
A circuit for providing an output voltage for a DRAM word line which can be used to drive memory word lines which can be as high as 2Vdd. Transistors in a boosting circuit are fully switched, eliminating reduction of the boosting voltage by Vtn through the transistors. The boosting capacitors are charge by Vdd. A regulator detects conduction current of a replica of a memory cell access transistor, shutting off the boosting circuit clock oscillator when the correct voltage to operate the access transistor has been reached.
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申请公布号 |
US6614705(B2) |
申请公布日期 |
2003.09.02 |
申请号 |
US20010819488 |
申请日期 |
2001.03.28 |
申请人 |
MOSAID TECHNOLOGIES, INC. |
发明人 |
FOSS RICHARD C.;GILLINGHAM PETER B.;HARLAND ROBERT F.;LINES VALERIE L. |
分类号 |
G05F3/20;G11C5/14;G11C8/08;G11C11/4074;G11C11/408;H02M3/07;(IPC1-7):G11C8/00 |
主分类号 |
G05F3/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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