发明名称 Method for testing semiconductor integrated circuit device equipped with power make-up circuit used in burn-in test
摘要 There is a possibility that user brings a semiconductor dynamic random access memory device to a burn-in test after packaging, and a power transfer circuit is connected between an external pin and an internal power supply line, wherein the power transfer circuit discriminates an external high power voltage from other lower voltages so as connect the external pin to the internal power supply line, thereby allowing the user to carry out the burn-in test at a high speed.
申请公布号 US6614254(B2) 申请公布日期 2003.09.02
申请号 US20010984843 申请日期 2001.10.31
申请人 NEC CORPORATION 发明人 TAMAKI SATOSHI
分类号 G11C11/407;G11C11/401;G11C29/00;G11C29/06;G11C29/50;H01L21/8242;H01L27/108;(IPC1-7):G01R31/26 主分类号 G11C11/407
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