VACUUM DRY PLASMA PROCESS

摘要

PURPOSE: A vacuum dry plasma process is provided to eliminate static electricity between a substrate and a lower electrode by generating plasma again before the substrate on which a vacuum dry plasma process is performed is unloaded to the outside of a chamber. CONSTITUTION: The substrate is loaded into a process chamber(ST1). A plasma etch process using vacuum dry plasma is performed on the loaded substrate(ST2). An additional plasma process is performed on the resultant structure so that the substrate negatively charged in the plasma etch process is neutralized by using the positive charges in the additionally generated plasma(ST3). The neutralized substrate is unloaded from the process chamber(ST4).