发明名称 |
Method for manufacturing flash memory device |
摘要 |
In a method for manufacturing a flash memory device, a first gate insulating film, a first gate conductive film, and a second insulating film are sequentially formed on a semiconductor substrate. A region where a first gate is to be formed is defined by etching the second insulating film to expose an upper portion of the first gate conductive film. Second conductive film spacers are formed along sidewalls of the etched second insulating film. An oxide film is formed on the exposed surface of the second conductive film spacers and the first gate conductive film. Silicon insulating spacers are formed on the sidewalls of the etched second insulating film. A source junction contact hole is formed by etching the first gate conductive film and the first gate insulating film by using the second insulating film and the silicon insulating film spacers as a mask. A source junction contact fill is formed filling the source junction contact hole. The first gate is formed by sequentially removing the second insulating film and the first gate conductive film.
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申请公布号 |
US2003155608(A1) |
申请公布日期 |
2003.08.21 |
申请号 |
US20030353374 |
申请日期 |
2003.01.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO MIN-SOO;PARK SANG-WOOK;KIM DAI-GEUN |
分类号 |
H01L21/8247;H01L27/115;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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