| 摘要 |
PROBLEM TO BE SOLVED: To form a thick and smooth SiGe layer where stress is reduced. SOLUTION: The method for manufacturing a semiconductor substrate includes a method for forming an SiGe layer having relatively high Ge concentration. It comprises a process to form a silicon substrate, a process where an SiGe layer whose Ge concentration is 22% or higher as mol fraction is deposited to a thickness of 100-500 nm, an H<SP>+</SP>ion is implanted in the SiGe layer by a dose amount of 1.10<SP>16</SP>cm<SP>-2</SP>to 5.10<SP>16</SP>cm<SP>-2</SP>with an approximate energy of 20-40 keV, a process where the SiGe layer is reduced by annealing the silicon substrate and SiGe layer at 650-950°C in an inactive atmosphere for 30 seconds - 30 minutes, and a process where the layer of silicon applied with tensile strain is deposited on the reduced SiGe layer by a thickness of 50-30 nm. COPYRIGHT: (C)2003,JPO
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