| 摘要 |
PROBLEM TO BE SOLVED: To increase the capacitive coupling ratio between a floating gate and a control gate. SOLUTION: The capacitive coupling ratio is increased by a virtual ground semiconductor memory comprising a floating gate provided on a semiconductor substrate through a gate insulation film, a control gate of polysilicon layer provided to cover the upper surface of the floating gate and a part of the sidewall in the direction of channel width starting from the upper surface of the floating gate, diffusion bit lines provided on the opposite sides of the floating gate in the direction of channel width, and a silicide layer formed while being self-aligned on the control gate and the diffusion bit lines. COPYRIGHT: (C)2003,JPO
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