| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which reduction of power consumption can be realized through a simple structure without having any effect on the operating speed, and a method for fabricating the semiconductor device conveniently with high reliability. SOLUTION: The semiconductor device has a p-well 13 and an n-well 14 formed on a p-type silicon substrate 11 and bordering an isolation oxide film 12. A silicon gate MOS transistor is formed in each well. The gate electrodes 16 and 17 of n-channel transistors 31 and 32 formed in the p-well 13 are injected with arsenic as impurities, and the gate electrode 17 is further injected with phosphorus. The gate electrodes 18 and 19 of p-channel transistors 33 and 34 formed in the n-well 14 are injected with indium as impurities, and the gate electrode 19 is further injected with boron. COPYRIGHT: (C)2003,JPO
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