发明名称 |
Fully depleted SOI device with tungsten damascene contacts and method of forming same |
摘要 |
A fully depleted field effect transistor formed in a silicon on insulator (SOI) substrate includes a body region formed in a silicon device layer over an isolation layer of the SOI substrate. A gate is positioned above the body region and includes a base gate region adjacent the body region and a wide top gate region formed of tungsten damascene and spaced apart from the body region. An inverted T-shaped central channel region is formed between adjacent source regions and drain region in the body region.
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申请公布号 |
US6605843(B1) |
申请公布日期 |
2003.08.12 |
申请号 |
US20000637450 |
申请日期 |
2000.08.11 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
KRIVOKAPIC ZORAN;HOLBROOK ALLISON;CHERIAN SUNNY;YANG KAI |
分类号 |
H01L21/336;H01L21/84;H01L29/786;(IPC1-7):H01L27/01;H01L27/12;H01L31/039;H01L29/76;H01L29/94 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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