发明名称
摘要 PROBLEM TO BE SOLVED: To enhance the photoelectric conversion rate by providing a first electrode made of a linear conductive material, a semiconductor layer laminated coaxially with the first electrode to generate a potential difference between the inner and outer layers upon irradiation with light, and a second electrode formed on the opposite side to the first electrode. SOLUTION: An n-type semiconductor 12, an i-type semiconductor 13 and a p-type semiconductor 14 are deposited sequentially with a first electrode 11 as a central axis and a second electrode, i.e., a transparent electrode 15, is formed at the outer circumferential part. When such a photoelectric conversion element 10 is irradiated with light, a potential difference appears between the electrode 11 and the transparent electrode 15. The electrode 11 is formed of linear material. Each conductor covers other semiconductor with the electrode 11 as a central axis. Since the light receiving surface is formed over the entire circumference, light can be collected efficiently and the photoelectric conversion rate can be enhanced.
申请公布号 JP3435304(B2) 申请公布日期 2003.08.11
申请号 JP19970059529 申请日期 1997.03.13
申请人 发明人
分类号 G02F1/133;G02F1/1368;G09F9/00;H01L29/786;H01L31/04 主分类号 G02F1/133
代理机构 代理人
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