| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor element in which good ohmic contact of an n-type nitride semiconductor layer with an electrode is obtained even by omitting annealing and to provide a method for manufacturing the same. <P>SOLUTION: The method for manufacturing the nitride semiconductor element comprises the steps of emitting an exposed n-type nitride semiconductor layer with an electromagnetic wave, forming the electrode on the n-type nitride semiconductor layer in which the wave is emitted. Thus, a damage on the surface of the semiconductor layer due to etching, polishing or the like can be removed, and even when the annealing is omitted, the good ohmic contact of the semiconductor layer with the electrode is obtained. <P>COPYRIGHT: (C)2003,JPO |
