发明名称 Magnetoresistive memory for a complex programmable logic device
摘要 The present invention is directed to magnetoresistive memory and data storage devices. A system for providing distributed functionality in an electronic environment includes a plurality of platforms suitable for providing a logic function. The platforms include embedded programmable logic, and MRAM memory, the logic and MRAM memory communicatively coupled via an interconnect.
申请公布号 US2003149833(A1) 申请公布日期 2003.08.07
申请号 US20020061660 申请日期 2002.02.01
申请人 HAMLIN CHRISTOPHER L 发明人 HAMLIN CHRISTOPHER L
分类号 H03K19/177;(IPC1-7):G06F13/00 主分类号 H03K19/177
代理机构 代理人
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