Semiconductor device for operating with a safety transistor has a bipolar safety transistor with an emitter area to show voltage kickback.

摘要

A bipolar safety transistor (T1) has an emitter area (15), a base area (10) and a collector area with a first section (17) bordering on the base area and a second section (3) bordering on the first section. A current voltage characteristic curve for a reversible collector-emitter channeling in the safety transistor with increasing current density shows a first voltage kickback onto a first withstand voltage and then a second voltage kickback onto a second withstand voltage. An Independent claim is also included for a method for building a bipolar safety transistor for an integrated circuit.