发明名称 |
HIGH-DIELECTRIC THIN-FILM CAPACITOR AND METHOD OF MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a capacitor using a dielectric thin film of a high dielectric constant and having a small leakage current and a high dielectric breakdown voltage. SOLUTION: This high-dielectric thin-film capacitor is manufactured in such a way that an upper electrode and a lower electrode are respectively formed on the upper and the lower faces of the high-dielectric thin film, wherein the high-dielectric thin film having a perovskite structure is predominantly oriented to the (111) plane, the upper and the lower electrodes on the high-dielectric thin film have a face-centered cubic structure, the electrode thin films are predominantly oriented to the (111) plane, and the high-dielectric thin film is formed at a temperature of 300°C or lower. COPYRIGHT: (C)2003,JPO
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申请公布号 |
JP2003218227(A) |
申请公布日期 |
2003.07.31 |
申请号 |
JP20020328060 |
申请日期 |
2002.11.12 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
OBARA NAOKI;SAWADA TASUKE;KITAGAWA MASATOSHI;UENOYAMA TAKESHI |
分类号 |
H01L27/04;H01L21/316;H01L21/822;H01L21/8246;H01L27/105;(IPC1-7):H01L21/822 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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