发明名称 HIGH-DIELECTRIC THIN-FILM CAPACITOR AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a capacitor using a dielectric thin film of a high dielectric constant and having a small leakage current and a high dielectric breakdown voltage. SOLUTION: This high-dielectric thin-film capacitor is manufactured in such a way that an upper electrode and a lower electrode are respectively formed on the upper and the lower faces of the high-dielectric thin film, wherein the high-dielectric thin film having a perovskite structure is predominantly oriented to the (111) plane, the upper and the lower electrodes on the high-dielectric thin film have a face-centered cubic structure, the electrode thin films are predominantly oriented to the (111) plane, and the high-dielectric thin film is formed at a temperature of 300°C or lower. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003218227(A) 申请公布日期 2003.07.31
申请号 JP20020328060 申请日期 2002.11.12
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 OBARA NAOKI;SAWADA TASUKE;KITAGAWA MASATOSHI;UENOYAMA TAKESHI
分类号 H01L27/04;H01L21/316;H01L21/822;H01L21/8246;H01L27/105;(IPC1-7):H01L21/822 主分类号 H01L27/04
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