Single poly embedded eprom

摘要

The present invention proposes a novel structure of nonvolatile memory. The aspect of the present invention includes two serially connected PMOS transistor. The characteristic of the devices is that bias is not necessary to apply to the floating gate during the programming mode. Thus, the control gate is omitted for the structure or layout, thereby saving the space for making the control gate. The present invention may "automatically inject" carrier into floating gate for programming the status of the device.