| 发明名称 |
SUBSTRATE FOR GROWING EPITAXIAL LAYERS OF GALLIUM ARSENIDE |
| 摘要 |
FIELD: electronic engineering. SUBSTANCE: antimonides of metals of fourth period of periodic system are used for growing epitaxial layers of gallium arsenide. EFFECT: facilitated procedure of growing epitaxial layers; low cost of process.
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| 申请公布号 |
RU2209260(C2) |
申请公布日期 |
2003.07.27 |
| 申请号 |
RU20010115886 |
申请日期 |
2001.06.15 |
| 申请人 |
SKOE OTDELENIE);SKOE OTDEL |
发明人 |
AJTKHOZHIN S.A. |
| 分类号 |
C30B19/12;C30B15/00;C30B25/18;C30B29/10;C30B29/42;(IPC1-7):C30B19/12 |
主分类号 |
C30B19/12 |
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