| 摘要 |
PROBLEM TO BE SOLVED: To realize increase of the quantity of handling charge by eliminating deterioration of a transfer characteristic caused by a two-dimensional modulation of an adjacent region in a charge transfer. SOLUTION: In a conventional CCD solid-state imaging device, the potential of an n-type impurity zone of a vertical charge transfer (charge transfer region) is pulled up at its both sides with round shapes, which becomes a cause of deterioration of a transfer characteristic. In order to eliminate the above effect, n-type impurities are doped partially additionally into the n-type impurity zone of the vertical charge transfer, to thereby partially increase the additional amount of n-type impurity in the vertical charge transfer and to correct a potential under the transfer. As a result, the quantity of charge to be handled in the vertical charge transfer can be increased, and reduction of the amount of handled charge caused by reduction of the size of the element can be suppressed. COPYRIGHT: (C)2003,JPO
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