发明名称 |
OBSERVATION METHOD FOR SCANNING SECONDARY ELECTRON MICROSCOPE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To detect an optimum condition used to measure a two-dimensional distribution of hydrogen atoms in AlGaAs or GaAs by using a secondary electron microscope. <P>SOLUTION: When secondary electrons emitted by the irradiation with an electron beam at an accelerating voltage of 3 kV or less are observed, an image whose contrast is satisfactory is obtained. An irradiation current of 0.1 nA or more is preferable. <P>COPYRIGHT: (C)2003,JPO</p> |
申请公布号 |
JP2003207468(A) |
申请公布日期 |
2003.07.25 |
申请号 |
JP20020003273 |
申请日期 |
2002.01.10 |
申请人 |
CANON INC |
发明人 |
YOSHIDA SHIGEKI;OTSUKA MITSURU |
分类号 |
G01N23/225;H01J37/28;(IPC1-7):G01N23/225 |
主分类号 |
G01N23/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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