| 摘要 |
<P>PROBLEM TO BE SOLVED: To apply an HSG technology to a trench capacitor with excellent process matching performance. <P>SOLUTION: This method for manufacturing a semiconductor device comprises a process for forming a trench 105 on a silicon substrate 101 and for forming a side wall insulating film 121 on the upper part of the side wall of the trench 105, a process for forming an amorphous silicon film 108 on the side wall of the trench 105 other than the part where the side wall insulating film 121 is formed, a process for integrating the amorphous silicon film 108 into HSG to form an HSG 109, a process for introducing impurity into the HSG 109, a process for forming a cell plate 110 constituted of a diffusion layer on the semiconductor substrate 101 in the area where the HSG 109 is formed of the trench 105, a process for forming a capacitor insulating film 112 on the inner face of the trench 105, and a process for embedding an conductive film 113 through the capacitor insulating film 112 inside the trench 105. <P>COPYRIGHT: (C)2003,JPO |
