发明名称 GRINDING DEVICE AND GRINDING METHOD FOR SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To provide a grinding device and a grinding method in which a semiconductor wafer in every size can be worked to a thickness of≤micron unit with extreme high accuracy. SOLUTION: The device is provided with a thickness measuring instrument 5 having a grinding table 1, a grinder 2, a first measurer 3 for measuring the height of a grinding work plane 20a; and a second measurer 4 for measuring the height of a semiconductor wafer installing plane 1a for finding the thickness of a semiconductor wafer 20 from these measured values, and an operation commanding part for commanding operations to respective parts for additional grinding when the thickness is insufficient. In such a grinding device for the semiconductor wafer, the thickness measuring instrument 5 is further provided with a measurer switching and moving means for switching and moving the first measurer 3 and the second measurer 4 to a measuring position and a standby position, and the operation commanding part is configured to command the operation to the measurer switching and moving means and the grinder 2 for respectively switching and moving the first measurer 3 and the second measurer 4 to the standby position when not measuring the thickness or to the measuring position when measuring the thickness and for further stopping grinding when measuring the thickness. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003209085(A) 申请公布日期 2003.07.25
申请号 JP20020008836 申请日期 2002.01.17
申请人 SHARP CORP 发明人 ONISHI TOSHIO
分类号 B24B49/04;B24B7/20;H01L21/304;(IPC1-7):H01L21/304 主分类号 B24B49/04
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