| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device of relatively small size which will not malfunction due to leakage from a transistor region and has high reliability as a semiconductor device equipped with fine gate patterns with small size variance. <P>SOLUTION: The semiconductor device is equipped with a dummy pattern 13, which is provided in 1st source drain blocks 23 and 26 having gate patterns 10 and 11 and close to 2nd source drain blocks 24 and 27 adjacent to the 1st source drain blocks 23 and 26, and the dummy pattern 13 has a length L, with which no punch-through is generated. <P>COPYRIGHT: (C)2003,JPO |
