发明名称 MEMORY CIRCUIT TEST SYSTEM, SEMICONDUCTOR DEVICE, AND METHOD OF TESING MEMORY
摘要 A semiconductor device that performs refresh tests of a plurality of individual memories built into the same chip and prevents excessive testing during the refresh test. When a first testing circuit enters a wait state, the first testing circuit issues a refresh command REF to a first memory circuit. Then, the first memory circuit refreshes the memory cells until a second testing circuit enters the wait state. That is, since the memory cells of the first memory circuit are refreshed until the writing to a second memory circuit ends, the refresh test time of the first and second memory circuits are the same.
申请公布号 KR20030061417(A) 申请公布日期 2003.07.18
申请号 KR20037007400 申请日期 2003.06.03
申请人 发明人
分类号 G11C11/401;G11C11/406;G11C29/02 主分类号 G11C11/401
代理机构 代理人
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