| 摘要 |
PROBLEM TO BE SOLVED: To provide an exhaust-gas unit for vacuum control in a process chamber capable of performing formation of an oxide film and formation of a nitrogen film as a continuous process even in an oxide film process, etc., with high integration and systematization of a semiconductor. SOLUTION: This exhaust-gas unit 1 for vacuum control in a process chamber provided with a proportional valve 100 for vacuum control with which an input control port 123 is connected to the process chamber, an output port 122 of the proportional valve 100 for vacuum control, and an ejector 200 connected to an input suction port 233 is an exhaust-gas unit for controlling vacuum in the process chamber. An output exhaust port 244 of the ejector 200 is connected to an exhaust duct. The output port 122 side of the proportional valve 100 for vacuum control is made into a vacuum with the ejector 200, and the valve opening of the proportional valve 100 for vacuum control is made variable for adjusting the exhaust velocity of the ejector 200. Thereby, the vacuum in the process chamber is controlled. COPYRIGHT: (C)2003,JPO
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