METHOD FOR FABRICATING SEMICONDUCTOR DEVICE INCLUDING DUAL GATE OXIDE LAYER

摘要

PURPOSE: A method for fabricating a semiconductor device including a dual gate oxide layer is provided to reduce damage of a semiconductor substrate by using a plasma process or a decoupled-plasma-process. CONSTITUTION: A sacrificial oxide layer(12) is formed on a semiconductor substrate(11) including a cell region and a peripheral region. A mask(13) is formed on the sacrificial oxide layer to expose the cell region. A plasma process for the sacrificial oxide layer is performed under the inactive gas atmosphere in order to form an amorphous layer on the surface of the semiconductor substrate. A surface of the semiconductor substrate is exposed by removing the sacrificial oxide layer. A dual gate oxide layer is formed by performing a thermal oxidation process for the surface of the semiconductor substrate. A gate electrode is formed on the dual gate oxide layer.