| 摘要 |
PROBLEM TO BE SOLVED: To prevent the generation a nitrogen oxide (NOx) by inhibiting the existence of nitrogen or nitrogen compound gas in a decomposing reaction system of a perfluoro compound (PFC) gas. SOLUTION: A method for manufacturing a semiconductor device comprises steps of mounting a substrate (wafer) in a CVD chamber 101 of a CVD unit 100, supplying raw material gas such as tetraethoxysilane, oxygen or the like, thereby depositing a silicon oxide film on an upper part of the substrate (wafer), then supplying the PFC gas to remove a silicon oxide adhered to the bottom or sidewall of the chamber 101, and supplying a nitrogen gas or an inert gas containing no gas composed of a nitrogen compound as a purging gas PG if a turbo molecular pump 102 or an auxiliary drive pump 104 is driven when the PFC gas exhausted from the chamber 101 is decomposed by adding gas AG such as oxygen or the like. COPYRIGHT: (C)2003,JPO
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