| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device wherein the reliability of a contact plug can be improved, and to provide its manufacturing method. <P>SOLUTION: This semiconductor device is provided with a plurality of gate electrodes 12 which are formed on first and second regions of a silicon substrate 10 via a gate insulating film 11, insulating films 13 which are formed on upper surfaces and side surfaces of the gate electrodes 12 and whose upper surfaces exist at positions where height in the second region is higher than height in the first region, cell contact plugs 18, 19 arranged on the silicon substrate 10 between the adjacent gate electrodes 12 in the first region, interlayer insulating films 14 arranged on the silicon substrate 10 between the adjacent gate electrodes 12 in the second region, and an insulating film 17 which is arranged on the insulating films 13 in the first region and mainly formed of the same material as the cell contact plugs 18, 19. <P>COPYRIGHT: (C)2003,JPO |
