发明名称 |
Vertical power component manufacturing method |
摘要 |
A method for manufacturing a vertical power component on a silicon wafer, including the steps of growing a lightly-doped epitaxial layer of a second conductivity type on the upper surface of a heavily-doped substrate of a first conductivity type, the epitaxial layer having a thickness adapted to withstanding the maximum voltage likely to be applied to the power component during its operation; and delimiting in the wafer an area corresponding to at least one power component by an isolating wall formed by etching a trench through the epitaxial layer and diffusing from this trench a dopant of the first conductivity type of high doping level.
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申请公布号 |
US2003129812(A1) |
申请公布日期 |
2003.07.10 |
申请号 |
US20030346444 |
申请日期 |
2003.01.17 |
申请人 |
STMICROELECTRONICS S.A. |
发明人 |
AURIEL GERARD;CORNIBERT LAURENT |
分类号 |
H01L29/74;H01L21/225;H01L21/331;H01L21/332;H01L21/76;H01L21/761;H01L21/763;H01L29/06;H01L29/739;H01L29/78;(IPC1-7):H01L21/22 |
主分类号 |
H01L29/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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