发明名称 Dynamic biasing for cascoded transistors to double operating supply voltage
摘要 Cascoded transistors can be used to allow circuits to operate at higher operating voltages than the voltages at which individual transistors (formed by a given process) can function. However, common techniques for cascading transistors result in circuits being unable to operate at lower operating voltages. The present invention dynamically biases cascoded transistors in response to the level of the operating voltage, which can vary. Providing separate dynamic bias voltages for N-type and P-type CMOS devices allows circuits using this technique to achieve a wider operating voltage. The wider operating range makes circuits using this technique readily adaptable to a range of power supplies (e.g., different battery configurations) and applications (e.g., driving displays).
申请公布号 US6590443(B1) 申请公布日期 2003.07.08
申请号 US20020144946 申请日期 2002.05.13
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 VU LUAN M.
分类号 G05F3/24;(IPC1-7):G05F3/02 主分类号 G05F3/24
代理机构 代理人
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