| 摘要 |
<p>The present invention provides a method of manufacturing a semiconductor device, the method comprising the step of incorporating nitrogen into an oxide layer of a semiconductor structure to form an oxynitride dielectric including the further steps of forming a poly-silicon structure over the oxide layer, introducing nitrogen into the poly-silicon structure and conducting a thermal step to diffuse the nitrogen to the poly-silicon/oxide interface, wherein the poly-silicon structure is formed as a multi-layer structure including a poly-silicon layer (14) adjacent said oxide layer (16), and the nitrogen is introduced into said poly-silicon layer prior to the formation of a further layer of the said structure thereon.</p> |
