Complex semiconductor device and electric power conversion appratus using it

摘要

An MIS gate type semiconductor device having a low resistive loss in the ON state and a wide safe operation region is disclosed. In this semiconductor device, the p-base layer of the thyristor and the emitter electrode are connected together using a suitable nonlinear device. As a result, lower loss and higher capacity of the semiconductor device can be realized in order not only to make it easy to turn ON the thyristor but also to make the safe operation region wide.