Nonvolatile semiconductor memory

摘要

A nonvolatile semiconductor memory which is provided with a plurality of memory elements each having a control gate and a floating gate such that data is stored by electron injection to the floating gate and electron emission from the floating gate, including an electric current detecting circuit for detecting a drain current supplied to a drain of each of the memory elements and a voltage control circuit for controlling a gate voltage supplied to the control gate of each of the memory elements, in accordance with the drain current detected by the electric current detecting circuit.