High-voltage diode

摘要

A high-voltage diode has a dopant concentration of an anode region and a cathode region optimized in terms of basic functions static blocking and conductivity. Dopant concentrations range from 1x1017 to 3x1018 dopant atoms per cm3 for the anode emitter, especially on its surface 1019 dopant atoms per cm3 or more for the cathode emitter and approximately 1016 dopant atoms per cm3 for the blocking function of an anode-side zone.