| 发明名称 |
Polishing slurry for use in CMPof SiC series compound, polishing method, and method of manufacturing semiconductor device |
| 摘要 |
A polishing slurry for CMP of an SiC series compound film, includes colloidal silica having a primary particle diameter ranging from 5 nm to 30 nm, and at least one acid selected from the group consisting of an amino acid having a benzene ring and an organic acid having a heterocycle. |
| 申请公布号 |
US2003124850(A1) |
申请公布日期 |
2003.07.03 |
| 申请号 |
US20020326407 |
申请日期 |
2002.12.23 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MINAMIHABA GAKU;YANO HIROYUKI;KURASHIMA NOBUYUKI |
| 分类号 |
B24B37/00;B82Y10/00;B82Y99/00;C09G1/02;C09K3/14;H01L21/304;H01L21/3105;H01L21/321;H01L21/768;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
B24B37/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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