发明名称 |
METHOD FOR MANUFACTURING THIN FILM TRANSISTOR PANEL OF REFLECTIVE LIQUID CRYSTAL DISPLAY DEVICE |
摘要 |
PURPOSE: A method for manufacturing a thin film transistor panel of a reflective liquid crystal display device is provided to remove a defect in the openness of a gate pad area with using five masks. CONSTITUTION: A substrate employs a TFT(Thin Film Transistor) area, a capacitor hole area, a gate pad area, and a pan out area. A gate electrode is formed at the TFT area by using a first mask while forming a first metal layer on the capacitor hole area. A gate insulating layer is formed on the gate electrode. An activated layer is formed at the TFT area on the gate insulating film by using a second mask. Source/drain electrodes are formed at the TFT area by using a third mask while forming a common line at the capacitor hole area and a second metal layer(105c) at the pan out area. A protective film is formed and an organic insulating film(107) is formed on the protective film to be selectively patterned. The protective film is etched by using a fourth mask to expose the source/drain electrodes, the first and the second metal layers. A pixel electrode connected with the source/drain electrodes and the first metal layer while forming a third metal layer(111c) at the gate pad area and another third metal layer(111d) at the pan out area.
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申请公布号 |
KR20030053563(A) |
申请公布日期 |
2003.07.02 |
申请号 |
KR20010083316 |
申请日期 |
2001.12.22 |
申请人 |
BOE HYDIS TECHNOLOGY CO., LTD. |
发明人 |
CHOI, HYEON MUK;LIM, SEUNG MU;PARK, JAE CHEOL |
分类号 |
G02F1/1333;(IPC1-7):G02F1/133 |
主分类号 |
G02F1/1333 |
代理机构 |
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