发明名称 METHOD FOR MANUFACTURING THIN FILM TRANSISTOR PANEL OF REFLECTIVE LIQUID CRYSTAL DISPLAY DEVICE
摘要 PURPOSE: A method for manufacturing a thin film transistor panel of a reflective liquid crystal display device is provided to remove a defect in the openness of a gate pad area with using five masks. CONSTITUTION: A substrate employs a TFT(Thin Film Transistor) area, a capacitor hole area, a gate pad area, and a pan out area. A gate electrode is formed at the TFT area by using a first mask while forming a first metal layer on the capacitor hole area. A gate insulating layer is formed on the gate electrode. An activated layer is formed at the TFT area on the gate insulating film by using a second mask. Source/drain electrodes are formed at the TFT area by using a third mask while forming a common line at the capacitor hole area and a second metal layer(105c) at the pan out area. A protective film is formed and an organic insulating film(107) is formed on the protective film to be selectively patterned. The protective film is etched by using a fourth mask to expose the source/drain electrodes, the first and the second metal layers. A pixel electrode connected with the source/drain electrodes and the first metal layer while forming a third metal layer(111c) at the gate pad area and another third metal layer(111d) at the pan out area.
申请公布号 KR20030053563(A) 申请公布日期 2003.07.02
申请号 KR20010083316 申请日期 2001.12.22
申请人 BOE HYDIS TECHNOLOGY CO., LTD. 发明人 CHOI, HYEON MUK;LIM, SEUNG MU;PARK, JAE CHEOL
分类号 G02F1/1333;(IPC1-7):G02F1/133 主分类号 G02F1/1333
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