| 摘要 |
PURPOSE: A circuit for controlling a row path in a semiconductor memory apparatus is provided to reduce the circuit area by reducing an identical block in a row path control circuit. CONSTITUTION: An input buffer(402) receives a bank address signal(BADi) from external. A bank active control block(404) receives the bank address signal(BADi) from the input buffer(402) to generate a bank selecting signal(BAi). A row control signal block(406) receives the bank selecting signal(BAi) to generate sense amplifier driving signals(SAENB,SAE1B,SAE2B), a word line selecting signal(RACBi), and a redundancy cell selecting signal(XAEi) and provides the sense amplifier driving signals(SAENB,SAE1B,SAE2B) to a bank(410). A cell array control block(408) receives the word line selecting signal(RACBi) and the redundancy cell selecting signal(XAEi) to generate word line selecting signals(XDGB,WPHMW,WPHB,WPHFX) and provide them to the bank(410).
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