METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to be capable of obtaining high dielectric constant and low leakage current by using a compound thin film of STO(Strontium Titanate Oxide) and Ta2O5. CONSTITUTION: A lower electrode is formed on a semiconductor substrate. An oxide thin film containing strontium, tantalum and titanium is formed on the lower electrode. A compound thin film consisting of STO(Strontium Titanate Oxide) and Ta2O5 is formed by annealing the oxide thin film containing strontium, tantalum and titanium. Then, an upper electrode is formed on the compound thin film of STO and Ta2O5.