| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric nonvolatile semiconductor memory in which data is not destroyed even when a polarization attenuation phenomenon is caused in ferroelectric layers. SOLUTION: A ferroelectric nonvolatile semiconductor memory comprises a bit line BL, a transistor TR for selection, a memory unit MU constituted of M pieces of memory cells MCM (M≥2), and M lines of plate lines PL. Each memory cell comprises a first electrode 21, a ferroelectric layer 22 and a second electrode 23. In the memory unit MU, the first electrode 21 of the memory cell MCM is common, the common first electrode 21 is connected to the bit line BL through the transistor TR for selection, the second electrode 23 of the (m)th memory cell is connected to the (m)th plate line PL<SB>m</SB>, a circuit TRS is provided further to ground the common first electrode 21 or to short-circuit the M lines of plate lines PLM and the common first electrode 21. COPYRIGHT: (C)2003,JPO
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