INPUT UNIT OF SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: An input unit of a semiconductor memory device is provided to prevent a malfunction of the input buffer by generating a power-up signal using an external supply voltage. CONSTITUTION: An input unit includes a reference voltage generation portion(110), a power-up signal generation portion(130), and an input buffer(140). The reference voltage generation portion generates a reference voltage by using the first external supply voltage. The power-up signal generation portion generates a power-up signal by using the first external supply voltage. The power-up signal is enabled after the reference voltage is enabled. The input buffer receives the reference voltage and is activated by the power-up signal. The input buffer outputs an internal operation enable signal by comparing the reference voltage to an external clock enable signal.