发明名称 |
Wafer and method of fabricating the same |
摘要 |
A method of manufacturing a wafer is disclosed. The method includes the steps of: (a) providing a substrate on which a number of semiconductor devices are formed and covered with a passivation layer; (b) exposing a number of contact pads in connection with the semiconductor devices by etching a portion of the passivation layer which are corresponding to the contact pads; and (c) cleaning the contact pads by soaking the substrate into a nitric acid solution and than rinsing. The concentration of the nitric acid solution can be about in the range between 0.01 vol. % and 30 vol. % and preferably about in the range between 1 vol. % and 10 vol. %. Thus, defects on wafers are greatly reduced with causing damages.
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申请公布号 |
US2003119295(A1) |
申请公布日期 |
2003.06.26 |
申请号 |
US20020093047 |
申请日期 |
2002.03.08 |
申请人 |
CHANG FANG-CHU;YU WEN-BIN;WANG HSIN-CHIN |
发明人 |
CHANG FANG-CHU;YU WEN-BIN;WANG HSIN-CHIN |
分类号 |
H01L21/304;H01L21/306;H01L21/311;H01L21/60;H01L23/31;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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