发明名称 |
Semiconductor wafer cleaning apparatus and cleaning method using the same |
摘要 |
A semiconductor cleaning apparatus and a method of cleaning a wafer surface using the semiconductor cleaning apparatus are provided. In the semiconductor cleaning apparatus, wastewater is easily treated, the consumption of chemical usage is considerably reduced, and a contaminant removal efficiency on the wafer surface is maximized even at a room temperature or a low temperature by using a mixed chemical solution composed of an aqueous ammonium hydroxide and ozone as a cleaning solution in cleaning the wafer surface. In the method of cleaning the wafer surface, a cleaning solution is formed in a mixing tank by adding ozone to aqueous ammonium hydroxide. The cleaning solution is supplied into a cleaning bath through a filter for removing ozone bubble. Megasonic power is applied to the cleaning solution in the cleaning bath using a megasonic transducer. A wafer dipped in the cleaning solution which is at a room temperature to remove the contaminants on wafer surface.
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申请公布号 |
US2003116174(A1) |
申请公布日期 |
2003.06.26 |
申请号 |
US20010023940 |
申请日期 |
2001.12.21 |
申请人 |
PARK JIN-GOO;EOM DAE-HONG;LEE JAE-HWA;YOON NEUNG-GOO |
发明人 |
PARK JIN-GOO;EOM DAE-HONG;LEE JAE-HWA;YOON NEUNG-GOO |
分类号 |
B08B3/00;B08B3/08;B08B3/12;B08B3/14;C11D7/02;C11D7/06;C11D11/00;H01L21/00;(IPC1-7):B08B3/12 |
主分类号 |
B08B3/00 |
代理机构 |
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代理人 |
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