METHOD FOR FABRICATING CYLINDRICAL CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a cylindrical capacitor of a semiconductor device is provided to make a cylinder have a uniform height, and to minimize damage to the upper portion of the cylinder by performing a slight chemical mechanical polishing(CMP) process on a buried insulation layer after an etch-back process or a CMP process is performed on the buried insulation layer. CONSTITUTION: A mold insulation layer pattern(109a) exposing a contact plug(105) is formed on an interlayer dielectric(103) on a semiconductor substrate(101). A conductive layer(111) for a storage electrode having a concave groove is formed on the semiconductor substrate along the mold insulation layer pattern. The buried insulation layer is formed on the conductive layer for the storage electrode to sufficiently fill the concave groove. An etch-back process or a CMP process is performed on the buried insulation layer to form a buried insulation layer pattern(113a) in the concave groove. A slight CMP process is performed on the conductive layer and the buried insulation layer pattern to form a cylindrical storage electrode separated into cells. The mold insulation layer pattern and the buried insulation layer pattern are eliminated. A dielectric layer and a plate electrode are formed on the storage electrode.