| 摘要 |
PURPOSE: A method for fabricating a metal interconnection of a semiconductor device is provided to improve reliability of a process and an electrical characteristic of the device by preventing a contact plug from being damaged while using a metal capping layer in a cleaning process even though an alignment error occurs between the contact plug and an upper metal interconnection. CONSTITUTION: After an interlayer dielectric is formed on a semiconductor substrate(11) having a lower metal interconnection(13), a contact hole(14a) is formed. The contact hole is partially filled with a conductive material layer to form the contact plug(17) of a recess structure. The metal capping layer(20) composed of a metal material that is not reacted with a solvent used in a cleaning process is formed on the contact plug. The upper metal interconnection(21) electrically connected to the lower metal interconnection through the metal capping layer and the contact plug is formed.
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