| 摘要 |
PURPOSE: A method for fabricating a semiconductor memory device is provided to reduce fabricating cost and supply convenience for use by forming a flash cell while a merged memory logic(MML) semiconductor device including a dynamic random access memory(DRAM) cell is formed so that the flash cell and the MML semiconductor device are integrated into a single chip. CONSTITUTION: An ion implantation process using dopants for forming an isolation layer(11), a well(12), etc. on a semiconductor substrate(10) is performed to form a DRAM region(C), a flash cell region(B) and a logic region(A). After the first gate oxide layer and the first gate electrode(14) for the logic region and the cell region are deposited, the first gate electrode in the DRAM region is removed through an etch process. The second oxide layer(15) and the second gate electrode(16) for the DRAM region are deposited. After a high temperature low deposition(HLD) oxide layer(17) and a nitride layer(18) as a hard mask(19) are deposited, a DRAM gate(20) and a flash cell control gate are patterned. A logic gate(22) and a flash cell floating gate(23) are simultaneously patterned in the logic region and the flash cell region.
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