METHOD FOR FORMING BIT LINE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a bit line of a semiconductor device is provided to be capable of preventing the bridge between bit lines by removing the protruding defect due to the roughness of a tungsten layer using a CMP(Chemical Mechanical Polishing) process. CONSTITUTION: After sequentially forming a tungsten layer(10) and a nitride layer(11) at the upper portion of a semiconductor substrate, a CMP process is carried out on the nitride layer(11) for removing the protruding detect due to the roughness of the tungsten layer(10). An anti-reflective coating(12) is deposited on the entire surface of the resultant structure. Preferably, the nitride layer(11) completed with the CMP process has a thickness of 1100-1300 angstrom.