发明名称 |
Semiconductor device |
摘要 |
There is provided a semiconductor device having a new structure which allows a high reliability and a high field effect mobility to be realized in the same time. In an insulated gate transistor having an SOI structure utilizing a mono-crystal semiconductor thin film on an insulating layer, pinning regions are formed at edge portions of a channel forming region. The pinning regions suppress a depletion layer from spreading from the drain side and prevent a short-channel effect. In the same time, they also function as a path for drawing out minority carriers generated by impact ionization to the outside and prevent a substrate floating effect from occurring.
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申请公布号 |
US6583474(B2) |
申请公布日期 |
2003.06.24 |
申请号 |
US20020187068 |
申请日期 |
2002.06.28 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;FUKUNAGA TAKESHI |
分类号 |
H01L27/12;H01L29/786;(IPC1-7):H01L27/01 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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