| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus for growing a nitride semiconductor crystal film having good planar uniformity of film thickness and composition. SOLUTION: The apparatus for growing a nitride semiconductor layer comprises a material gas supply tube for supplying a material gas to the surface of a substrate, and a first gas jet tube for injecting a pressed gas at an angle of 0 to 90°to the substrate via a straightening plate for preventing the gas from being diffused by a thermal convection. The apparatus further comprises a second gas jet tube for injecting the gas obtained by diluting the gas for removing the part of the material gas to be injected from the gas supply tube from the substrate or the material gas to be supplied from the gas supply tube. The jet tube is mounted so that the jet port is located at the side farther than the half of the substrate, and the planar irregularity of the composition ratio and the film thickness is reduced to several % or less by suppressing the partial growth on the substrate. COPYRIGHT: (C)2003,JPO
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