发明名称 |
METHOD OF PRODUCING SEMICONDUCTOR THIN FILM, METHOD OF PRODUCING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT, ELECTROOPTICAL DEVICE AND ELECTRONIC APPARATUS |
摘要 |
According to the semiconductor thin-film and semiconductor device manufacturing method of the present invention, an insulating film having a through-hole between two layers of silicon film is provided, the silicon film is partially melted by irradiating a laser thereon, and a substantially monocrystalline film is continuously formed extending via the through-hole from at least part of the layer of silicon film below the insulating film that continues to the through-hole, to at least part of the layer of silicon film above the insulating film. It is therefore sufficient to form a through-hole with a larger diameter than that of a hole formed by the conventional method, because the diameter of the through-hole in the insulating film may be the same size or slightly smaller than the size of a single crystal grain that comprises the polycrystal formed in the silicon film below the insulating film. Costly precision exposure devices and etching devices are therefore unnecessary. Numerous high-performance semiconductor devices can also be formed easily on a large glass substrate, as in large liquid-crystal displays and the like. <IMAGE> |
申请公布号 |
KR20030048403(A) |
申请公布日期 |
2003.06.19 |
申请号 |
KR20037003984 |
申请日期 |
2003.03.19 |
申请人 |
|
发明人 |
|
分类号 |
H01L29/786;B65G49/07;C23C16/44;C30B25/08;C30B25/10;H01L21/00;H01L21/20;H01L21/205;H01L21/336;H01L21/67;H01L21/673;H01L21/677;H01L21/77;H01L21/84 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|