| 摘要 |
PROBLEM TO BE SOLVED: To provide an electron beam device having a simple structure and capable of carrying out measurement or the like of potential contrast with high throughput and high reliability. SOLUTION: This electron beam device for irradiating an electron beam on a sample 15 such as a wafer with a pattern formed to evaluate the sample is provided with: a lens-barrel 1 with an electron beam source EG, an object lens 14, an E×B separator 13, and a secondary electron beam detector 17 housed; a stage 33 for holding the sample 15 and for relatively moving the sample 15 with respect to the barrel-lens 1; a working chamber controllable to a vacuum atmosphere and used for housing the stage 33; a loader 30 for supplying the sample 15 to the stage 33; a voltage applying mechanism 21 used for applying a voltage to the sample 15 and capable of applying at least two kinds of voltages to a lower electrode 20 under the object lens 14; and an alignment mechanism for measuring the arrangement direction of dies of the sample 15. In evaluating the sample 15, the moving direction of the stage 33 is so corrected as to coincide with the arrangement direction of the dies. COPYRIGHT: (C)2003,JPO
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