METHOD FOR FORMING SOI SUBSTRATE

摘要

PURPOSE: A method for forming an SOI(strained silicon on Silicon-germanium On Insulator) substrate is provided to enhance the mobility of the current carrier by forming a strained silicon layer on a surface of an SOI layer including germanium. CONSTITUTION: A relaxed silicon germanium layer is formed on the first silicon substrate by using an epitaxial growth method. A porous silicon germanium layer is formed on the relaxed silicon germanium layer. A silicon germanium epitaxial layer(118) is formed on the porous silicon germanium layer. An oxide layer(122) is formed on the second silicon substrate(124). A front surface of the first silicon substrate and a front surface of the second substrate are adhered to each other. A silicon germanium epitaxial layer is formed by removing material layers from an upper portion of the porous silicon germanium layer. A strained silicon epitaxial layer(126) is formed on the silicon germanium epitaxial layer.