发明名称 Massively parallel atomic layer deposition/chemical vapor deposition system
摘要 A method and apparatus for the use of individual vertically stacked ALD or CVD reactors. Individual reactors are independently operable and maintainable. The gas inlet and output are vertically configured with respect to the reactor chamber for generally axi-symmetric process control. The chamber design is modular in which cover and base plates forming the reactor have improved flow design.
申请公布号 US2003109094(A1) 申请公布日期 2003.06.12
申请号 US20020282609 申请日期 2002.10.29
申请人 SEIDEL THOMAS E.;JANSZ ADRIAN;PUCHACZ JUREK;DOERING KEN 发明人 SEIDEL THOMAS E.;JANSZ ADRIAN;PUCHACZ JUREK;DOERING KEN
分类号 C23C16/44;C23C16/455;C23C16/54;(IPC1-7):H01L21/823 主分类号 C23C16/44
代理机构 代理人
主权项
地址