发明名称 Backside cannelure to provide for wafer shift detection
摘要 A backside cannelure of an electrode to provide for detecting semiconductor wafer shift after the wafer has been positioned over the cannelure of the electrode is disclosed. The wafer has a backside and a proper position over the cannelure. The cannelure exposes the backside of the wafer to a gas piped in through one or more holes of the electrode. The cannelure has a size such that deviation of the wafer from its proper position by more than a threshold partially exposes the cannelure, such that the gas leaks from the cannelure as now partially exposed. A gas flow detector may detect the gas leaking from the cannelure, and provide corresponding detection of the wafer deviating from its proper position.
申请公布号 US6576483(B1) 申请公布日期 2003.06.10
申请号 US20020101909 申请日期 2002.03.19
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 CHOU CHING-HIAN;YUEN JEAN-HUR;HSIEH TSUNG-CHI;LIN YUNG-KAI
分类号 G01B11/03;H01L21/00;H01L21/687;(IPC1-7):H01L21/00;G01R31/26;G01B11/14;B05C11/00 主分类号 G01B11/03
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